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data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 1 general description the AP3615 is a step-up dc-dc converter based on 1x/1.5x charge pump and low dropout current sink, which helps it maintain the highest efficiency. the AP3615 is specially designed to drive up to 5 wleds in backlight display. the AP3615 provides up to 20ma current for each wled. there are totally 16 steps of current control, which is achieved through a digital pulse dimming function on en pin. additionally, 1mhz high switching frequency enables the use of small external capacitors. internal soft-start circuitry prevents excessive inrush current during start-up and mode transition. the supply voltage of AP3615 ranges from 2.8v to 5.5v which make it ideally suit for applications powered by li-ion battery. the AP3615 is available in the tiny package of qfn-3 3-16. features ? regulated output current with 3% matching ? drives up to 5 wleds at 20ma each ? 16 steps brightness control using pulse signal dimming ? wide operating voltage range: 2.8v to 5.5v ? high operating frequency: 1mhz ? auto 1x/1.5x charge pump mode selection ? built-in soft-start ? output over voltage protection ? built-in uvlo ? built-in otsd ? operating temperature range: -40c to 85c applications ? mobile phone ? pda ? mp3/4 figure 1. package type of AP3615 qfn-33-16
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 2 c1- c1+ c2+ c2- agnd pgnd vin en d5 d4 d3 d2 d1 nc vout1 exposed pad, connected to agnd vout2 note : pin 14 should be connected with pin 16 on pcb board. ep 5678 13 14 15 16 1 2 3 49 10 11 12 pin 1 dot by marking pin configuration fn package (qfn-33-16) figure 2. pin configuration of AP3615 (top view) pin description pin number pin name function 1 c1- flying capacitor 1 negative te rminal. the flying capacitor should be connected as close to this pin as possible 2 c2- flying capacitor 2 negative te rminal. the flying capacitor should be connected as close to this pin as possible 3 c2+ flying capacitor 2 positive terminal. the flying capacitor should be connected as close to this pin as possible 4 c1+ flying capacitor 1 positive terminal. the flying capacitor should be connected as close to this pin as possible 5 agnd analog ground 6 pgnd power ground 7 vin supply voltage input 8 en enable control input. logic high enables th e ic; while logic low forces the ic into shutdown mode. it is used for digital di mming by applying a pulse signal on it. 9, 10, 11, 12, 13 d5 ~ d1 current sink for wled5, 4, 3, 2, 1. conne ct the cathode of wled s to these pins. if not used, these pins must be connected with vin 14 vout2 output pin 2. it power s 5 channels current sink 15 nc no connection 16 vout1 output pin 1. it?s the charge pump output. the output capacitor should be placed closely to this pin
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 3 functional block diagram pgnd agnd vout1 vout2 vin en c1- c1+ c2- c2+ d 2 d1 d3 d4 1x /1.5x charge pump 1mhz osc current limitation soft start otsd uvlo ovp 5 channels current sink 16 steps pulse dimming controller shutdown delay 14 3 2 5 6 7 8 10 11 12 13 14 16 d5 9 figure 3. functional block diagram of AP3615 ordering information AP3615 - circuit type g1: green package temperature range part number marking id packing type qfn-3 3-16 -40 to 85 c AP3615fntr-g1 b2b tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. tr: tape and reel package fn: qfn-3 3-16
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 4 absolute maximum ratings (note 1) parameter symbol value unit input voltage v in -0.3 to 6 v vout pin voltage (vout1 & vout2) v out -6 to 0.3 v en pin voltage v en -0.3 to 6 v c1+, c2+ pin voltage v c+ -0.3 to 6 v c1-, c2- pin voltage v c- -6 to 0.3 v d1, d2, d3, d4 and d5 pin voltage v d v out to v in v thermal resistance (junction to ambient, no heat sink, free air) ja 60 oc/w operating junction temperature t j 150 oc storage temperature t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit input voltage v in 2.8 5.5 v operating ambient temperature t a -40 85 oc
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 5 electrical characteristics v in =3.6v, v en =v in , t a =25oc, c in =c1=c2=c out =1 f, v f (forward voltage)=3.2v, unless otherwise noted. parameter symbol conditions min typ max unit input section input voltage v in i d =0ma to 100ma 2.8 5.5 v under voltage lockout threshold v in falling 2.2 v under voltage lockout hysteresis 250 mv supply current i cc no load 1.7 3 ma shutdown supply current i shdn v en =gnd 3 10 a charge pump section switch frequency f osc v in =3.0v, 1.5x mode 0.7 1 1.3 mhz 1x mode to 1.5x mode transition voltage (v in falling) v 1.5x v d =3.2v, i d1 =i d2 =i d3 =i d4 =i d5 =20ma 3.5 3.6 v 1.5x mode to 1x mode transition voltage (v in rising) v 1x v d =3.2v, i d1 =i d2 =i d3 =i d4 =i d5 =20ma 3.7 3.8 v current source section wled current i d 100% setting, 3.0v v in 5.0v t a =-40oc to 85oc 18.5 20 21.5 ma current matching between any two outputs i d-match1 v d1 =v d2 =v d3 =v d4 =v d5 =3.2v -3 3 % current matching between any two outputs i d-match2 v d1 =v d2 =v d3 =v d4 =v d5 =3.0v to 4.0v v in =3.2v to 5.0v -3.5 3.5 % enable section en high level threshold voltage v ih 1.5 v en low level threshold voltage v il 0.5 v en input current i en v en = 0v to 5v 1 10 a en low to shutdown delay t shdn 1 ms en low time for dimming t lo 0.1 0.3 ms en high time for dimming t hi 0.1 ms total device soft-start time t ss i d =100ma total 200 s inrush current i inrush v in =3.2v, i d =100ma total 320 ma over voltage protection v ovp note 2 5.5 v thermal shutdown t otsd 160 oc thermal shutdown hysteresis t hys 20 oc thermal resistance (junction to case) jc qfn-33-16 15 oc/w note 2: open circuit at any wled that is programmed to be in the on state.
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 6 typical performance characteristics t a =25oc, c in =c 1 =c 2 =c out =1 f, v f =3.2v, unless otherwise noted. figure 4. shutdown supply current vs. temperature figure 5. wled current vs. input voltage figure 6. 1x mode quiesce nt current vs. temperature figure 7. 1.5x mode quiescent current vs. temperature -40 -20 0 20 40 60 80 100 120 140 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v in =3.2v shut down shutdown supply current ( a) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t a =25 o c v in =5v no load 1x mode quiescent current (ma) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 2.0 2.4 2.8 3.2 3.6 4.0 4.4 t a =25 o c v in =3.2v no load 1.5x mode quiescent current (ma) temperature ( o c) 2.83.23.64.04.44.85.25.6 16 17 18 19 20 21 22 t a =25 o c v in falling wled current (ma) input voltage (v) i d1 i d2 i d3 i d4 i d5
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 7 typical performance characteristics (continued) t a =25oc, c in =c 1 =c 2 =c out =1 f, v f =3.2v, unless otherwise noted. figure 8. 1x mode wled current vs. temperature figure 9. 1.5x mode wled current vs. temperature figure 10. efficiency vs. input voltage figure 11. frequency vs. temperature -40 -20 0 20 40 60 80 100 120 140 16 17 18 19 20 21 22 t a =25 o c v in =5v wled current (ma) temperature ( o c) i d1 i d2 i d3 i d4 i d5 -40 -20 0 20 40 60 80 100 120 140 16 17 18 19 20 21 22 t a =25 o c v in =3.6v wled current (ma) temperature ( o c) i d1 i d2 i d3 i d4 i d5 -40 -20 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 v in =3.6v i d1 =i d2 =i d3 =i d4 =i d5 =20ma frequency (mhz) temperature ( o c) 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 10 20 30 40 50 60 70 80 90 100 t a =25 o c v in from high to low i d1 =i d2 =i d3 =i d4 =i d5 =20ma efficiency (%) input voltage (v)
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 8 typical performance characteristics (continued) t a =25oc, c in =c 1 =c 2 =c out =1 f, v f =3.2v, unless otherwise noted. figure 12. 1x mode quiescent current vs. figure 13. uvlo thres hold voltage vs. temperature input voltage figure 14. 1x mode turn on characteristic figure 15. 1x mode turn off characteristic v c1+ 2v/div v out 1v/div v en 2v/div i in 0.2a/div v c1+ 2v/div v out 1v/div v en 2v/div i in 0.2a/div time (100 s/div) time (400 s/div) 2.02.53.03.54.04.55.05.5 1.0 1.2 1.4 1.6 1.8 2.0 2.2 quiescent current (ma) input voltage (v) t a =25 o c no load v in rising -40 -20 0 20 40 60 80 100 120 140 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 t a =25 o c no load uvlo threshold voltage (v) temperature ( o c) power falling power rising
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 9 typical performance characteristics (continued) t a =25oc, c in =c 1 =c 2 =c out =1 f, v f =3.2v, unless otherwise noted. figure 16. 1.5x mode turn on characteristic figure 17. 1.5x mode turn off characteristic figure 18. 1x mode dimming operation figure 19. output ripple (v in =3.3v, i d =100ma) (v in =5v, f en =2khz) v en 2v/div i wled 5ma/div v c1+ 2v/div v out 1v/div v en 2v/div i in 0.2a/div time (100 s/div) v c1+ 2v/div v out 1v/div v en 2v/div i in 0.2a/div time (400 s/div) time (2ms/div) i in 20ma/div v out 50mv/div v c1+ 2v/div time (400ns/div) v in 20mv/div
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 10 digital dimming operating diagram figure 20. digital dimming operating diagram of AP3615 note 3: the dimming control can be achieved by applying a pulse to the en pin. when the low level duration time of pulse is between t lomin and t lomax , and the high level duration time is larger than t himin , the led current will decrease 1/16. if the low level duration time is larger than t shdnmax, the ic will be turned off. when AP3615 is powered on, the wled is in full brightness. and it will keep maximum current until the pulse is detected. after 15 pulses the wled current decreases to 1/16 of full brightness. it will increase to full brightness if a pulse is added to en pin then.
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 11 typical application 4 wleds 5 wleds figure 21. typical applications of AP3615 detailed application information, pleas e refer to AP3615 application note.
data sheet 5 channel charge pump current si nk for led driver AP3615 jul. 2010 rev. 1. 2 bcd semiconductor manuf acturing limited 12 mechanical dimensions qfn-33-16 unit: mm(inch) 0 . 7 0 0 ( 0 . 0 2 8 ) 0 . 9 0 0 ( 0 . 0 3 5 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 0 5 0 ( 0 . 0 0 2 ) 0 . 1 7 8 ( 0 . 0 0 7 ) 0 . 2 2 8 ( 0 . 0 0 9 ) 0 . 1 8 0 ( 0 . 0 0 7 ) 0 . 2 8 0 ( 0 . 0 1 1 ) b s c 0 . 5 0 0 ( 0 . 0 2 0 ) 1 . 7 0 0 ( 0 . 0 6 8 ) r e f 1 . 7 0 0 ( 0 . 0 6 8 ) r e f 0 . 5 0 0 ( 0 . 0 2 0 ) 0 . 3 0 0 ( 0 . 0 1 2 ) b o t t o m v i e w e x p o s e d p a d p i n 1 i d e n t i f i c a t i o n p i n 1 i d e n t i f i c a t i o n 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) p i n 1
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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